Mosfets optimised for hot-swap in-rush

The 25V and 30V devices are intended to combine a wide safe operating area (SOA) and low on-resistance.

“PSMNR67-30YLE ASFET delivers 2.2x stronger SOA: 12V at 100ms) than previous technologies while having a maximum Rds(on) as low as 0.7mΩ [Vg=10V],” according to the company. “The Spirito effect, represented by the steeper downward slope found on SOA curves at higher voltages, has been eliminated, while performance is maintained across the full voltage and temperature range compared to unoptimised devices.”

Nexperia PSMNR67-30YLE hotswap mosfet

Three 25V and five 30V mosfets, including the one above, have been introduced, in LFPAK56 or LFPAK56E packages, with Rds(on) ranging across 0.7 to 2mΩ. Two additional 25V products are in the pipeline with on-resistance as low as 0.5mΩ.

The devices are characterised at 125°C and are provided with hot SOA curves (left) in the datasheets.

Applications are foreseen in data centre servers and communications equipment.

The PSMNR67-30YLE product page is here, and its data sheet here

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